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  ? semiconductor components industries, llc, 2013 september, 2013 ? rev. 5 1 publication order number: pzta96st1/d PZTA96ST1G high voltage transistor pnp silicon features ? these devices are pb?free, halogen free/bfr free and are rohs compliant maximum ratings rating symbol value unit collector?emitter voltage v ceo ?450 vdc collector?base voltage v cbo ?450 vdc emitter?base voltage v ebo ?5.0 vdc collector current i c ?500 madc total power dissipation up to t a = 25 c (note 1) p d 1.5 w storage temperature range t stg ?65 to +150 c junction temperature t j 150 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 in 2 . thermal characteristics characteristic symbol max unit thermal resistance, junction?to?ambient (note 2) r  ja 83.3 c 2. device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 in 2 . electrical characteristics (note 3) characteristic symbol min max unit off characteristics collector?emitter breakdown voltage (i c = ?1.0 madc, i b = 0) v (br)ceo ?450 ? vdc collector?emitter breakdown voltage (i c = ?100  adc, i e = 0) v (br)cbo ?450 ? vdc emitter?base breakdown voltage (i e = ?10  adc, i c = 0) v (br)ebo ?5.0 ? vdc collector?base cutoff current (v cb = ? 400 vdc, i e = 0) i cbo ? ?0.1  adc emitter?base cutoff current (v be = ? 4.0 vdc, i c = 0) i ebo ? ?0.1  adc on characteristics dc current gain (note 4) (i c = ? 10 madc, v ce = ? 10 vdc) h fe 50 150 ? saturation voltages (i c = ?20 madc, i b = ?2.0 madc) (i c = ?20 madc, i b = ?2.0 madc) v ce(sat) v be(sat) ? ? ?0.6 ?1.0 vdc 3. t a = 25 c unless otherwise noted. 4. pulse test: pulse width 300  s; duty cycle = 2.0%. http://onsemi.com collector 2,4 base 1 emitter 3 device package shipping ? ordering information sot?223 (to?261) case 318e style 1 ayw zta96   1 2 3 4 PZTA96ST1G sot?223 (pb?free) 1000/tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specification s brochure, brd8011/d. 1 a = assembly location y = year w = work week  = pb?free package marking diagram (note: microdot may be in either location)
PZTA96ST1G http://onsemi.com 2 typical characteristics figure 1. dc current gain figure 2. collector?emitter saturation voltage i c , collector current (ma) i c , collector current (ma) 1000 100 10 1 0.1 1 10 100 1000 1000 100 10 1 0.1 0 0.1 0.2 0.3 0.4 figure 3. base?emitter saturation voltage figure 4. base?emitter ?on? voltage i c , collector current (ma) i c , collector current (ma) 100 10 1 0.1 0 0.2 0.4 0.6 0.8 1.0 100 10 1 0.1 0 0.2 0.4 0.6 0.8 1.0 figure 5. capacitances figure 6. current?gain?bandwidth product v r , reverse voltage (v) i c , collector current (ma) 1000 100 10 1 0.1 1 10 100 1000 100 10 1 0.1 1 10 100 h fe , dc current gain v ce(sat) , coll?emit saturation voltage (v) v be(sat) , base?emit saturation voltage (v) v be(on) , base?emitter on voltage (v) c, capacitance (pf) f t , current?gain?bandwidth product (mhz) v ce = 10 v 150 c ?55 c 25 c ic/ib = 10 150 c ?55 c 25 c ic/ib = 10 150 c ?55 c 25 c 150 c ?55 c 25 c v ce = 10 v cib cob v ce = 2 v
PZTA96ST1G http://onsemi.com 3 package dimensions sot?223 (to?261) case 318e?04 issue n *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* 1.5 0.059  mm inches  scale 6:1 3.8 0.15 2.0 0.079 6.3 0.248 2.3 0.091 2.3 0.091 2.0 0.079 style 1: pin 1. base 2. collector 3. emitter 4. collector a1 b1 d e b e e1 4 123 0.08 (0003) a l1 c notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: inch. h e dim a min nom max min millimeters 1.50 1.63 1.75 0.060 inches a1 0.02 0.06 0.10 0.001 b 0.60 0.75 0.89 0.024 b1 2.90 3.06 3.20 0.115 c 0.24 0.29 0.35 0.009 d 6.30 6.50 6.70 0.249 e 3.30 3.50 3.70 0.130 e 2.20 2.30 2.40 0.087 0.85 0.94 1.05 0.033 0.064 0.068 0.002 0.004 0.030 0.035 0.121 0.126 0.012 0.014 0.256 0.263 0.138 0.145 0.091 0.094 0.037 0.041 nom max l1 1.50 1.75 2.00 0.060 6.70 7.00 7.30 0.264 0.069 0.078 0.276 0.287 h e ? ? e1 0 1 0 0 1 0   l l 0.20 ??? ??? 0.008 ??? ??? on semiconductor and are registered trademarks of semiconductor co mponents industries, llc (scillc). scillc owns the rights to a numb er of patents, trademarks, copyrights, trade secrets, and other intellectual property. a list ing of scillc?s product/patent coverage may be accessed at ww w.onsemi.com/site/pdf/patent?marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. all operating parame ters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or a uthorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in whic h the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or us e scillc products for any such unintended or unauthorized appli cation, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distribut ors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unin tended or unauthorized use, even if such claim alleges that scil lc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyrig ht laws and is not for resale in any manner. p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 pzta96st1/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative


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